Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition

Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition

Auteur(s) / Author(s)

DUPUIS R. D. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Microelectronics Research Center, The University of Texas at Austin, MER 1.606D-R9900, Austin, Texas 78712-1100, ETATS-UNIS

Résumé / Abstract

The III-V compound semiconductors are widely used throughout the world (as well as in space) for a wide variety of electronic and optoelectronic devices. Recently, a strong research and commercial interest has developed in the use of the III-V nitrides for visible (blue and green) light-emitting diodes and injection lasers and high-temperature electronics. The epitaxial growth of thin films and heterostructures of III-N was pioneered using the hydride vapor-phase epitaxial technique. However,in the past few years, the metalorganic chemical vapor deposition process has become the primary process for the growth of thin films of these compound semiconductors. This paper will discuss the growth of InAlGaN materials by metalorganic chemical vapor deposition.

Revue / Journal Title

Journal of crystal growth   ISSN 0022-0248   CODEN JCRGAE 

Source / Source

1997, vol. 178, n^o 1-2 (208 p.)  (99 ref.), pp. 56-73

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1967) (Revue)

Mots-clés anglais / English Keywords

Crystal growth methods ; Crystal growth from vapors ; MOCVD ; III-V semiconductors ; Instrumentation ; Precursor ; Substrates ; Operating mode ; Nitrides ; Crystal doping ; Epitaxy ; Selective area ; Injection laser ; Light emitting diodes ; Photodetectors ; Field effect transistors ; Semiconductor lasers ; Semiconductor devices ;

Mots-clés français / French Keywords

Méthode croissance cristalline ; Croissance cristalline en phase vapeur ; Méthode MOCVD ; Semiconducteur III-V ; Appareillage ; Précurseur ; Substrat ; Mode opératoire ; Nitrure ; Dopage cristal ; Epitaxie ; Aire sélective ; Laser injection ; Diode électroluminescente ; Photodétecteur ; Transistor effet champ ; Laser semiconducteur ; Dispositif semiconducteur ;

Mots-clés espagnols / Spanish Keywords

Método operatorio ; Laser inyección ;

Localisation / Location

INIST-CNRS, Cote INIST : 13507, 35400006738745.0050

http://cat.inist.fr/?aModele=afficheN&cpsidt=2768939

Leonard Quintero C.I 18.424.427 (EES)